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2SB1691
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier
REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004
Features
* * * * * Small size package: MPAK (SC-59A) Large Maximum current: IC = -1 A Low collector to emitter saturation voltage: VCE(sat) = -0.3 V max.(at IC/IB = -0.5 A/-0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Complementary pair with 2SD2655
Outline
MPAK 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is "WL-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base Voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Ratings -60 -50 -6 -1 -2 800* 150 -55 to +150 Unit V V V A A mW C C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Rev.2.00, Dec.09.2004, page 1 of 4
2SB1691
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min -60 -50 -6 200 Typ -0.2 -0.95 310 9.8 Max -100 -100 500 -0.3 -1.2 Unit V V V nA nA V V MHz pF Test Condition IC = -10 A, IE = 0 IC = -1 mA, RBE = IE = -10 A, IC = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.1 A IC = -0.5 A, IB = -0.05 A, Pulse test IC = -0.5 A, IB = -0.05 A, Pulse test VCE = -2 V, IC = -0.1 A VCB = -10 V, IE = 0, f = 1 MHz
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics (1) -200 Pulse
-35 0 A
Pc (mW)
1200 1000
IC (mA)
When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm
-30
0
A
A
Collector Power Dissipation
-25
0
Collector Current
800
-20
0 A
-100
-150 A
400
-100 A
IB = -50 A
200
0
50
100
150 Ta (C)
200
0
-2
-4
-6
-8
-10
Ambient Temperature
Collector to Emitter Voltage
VCE (V)
Typical Output Characteristics (2) -500
m A -7
-6 mA 5 mA - mA -4
Typical Transfer Characteristics
- A 3m
-2 mA
-1000
-400
IB = -1 mA
IC (mA)
IC (mA)
VCE = -2 V Pulse -100
Collector Current
-200 -100 Pulse 0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector Current
-300
-10
-1 0 -0.2 -0.4 -0.6 -0.8 VBE (V) -1.0 Base to Emitter Voltage
Collector to Emitter Voltage
VCE (V)
Rev.2.00, Dec.09.2004, page 2 of 4
2SB1691
Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V)
DC Current Transfer Ratio vs. Collector Current 1000
hFE
Saturation Voltage vs. Collector Current -2 -1 VBE(sat)
DC Current Transfer Ratio
100
-0.1 VCE(sat) -0.01 IC/IB = 10 Pulse -10 Collector Current -100 IC (mA) -1000
10 VCE = -2 V Pulse 1 -1 -10 -100 -1000
-0.002 -1
Collector Current IC (mA)
Collector Output Capacitance vs. Collector to Base Voltage
Cob (pF)
Gain Bandwidth Product vs. Collector Current 500
fT (MHz)
1000 f = 1MHz IE = 0
400
VCE = -2 V Pulse
Collector Output Capacitance
Gain Bandwidth Product
100
300 200
10
100 0 -1
1 -0.1
-1
-10
-100 VCB (V)
-10 Collector Current
-100 IC (mA)
-1000
Collector to Base Voltage
Rev.2.00, Dec.09.2004, page 3 of 4
2SB1691
Package Dimensions
As of January, 2003
Unit: mm
0.65
0.10 0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
0.3
+ 0.2 1.1 - 0.1
0.65
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK(T) -- Conforms 0.011 g
Ordering Information
Part Name 2SB1691WLQuantity 3000 pcs Shipping Container 178 mm Taping Reel
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Dec.09.2004, page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
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